Flat panel display incorporating control frame

ABSTRACT

A flat panel display including: a plurality of electrically addressable pixels; a plurality of thin-film transistor driver circuits each being electrically coupled to an associated at least one of the pixels, respectively; a passivating layer on the thin-film transistor driver circuits and at least partially around the pixels; a conductive frame on the passivating layer; and, a plurality of nanostructures on the conductive frame; wherein, exciting the conductive frame and addressing one of the pixels using the associated driver circuit causes the nanostructures to emit electrons that induce the one of the pixels to emit light.

RELATED APPLICATIONS

This application claims the benefit under 35 U.S.C. 119(e) of U.S.Provisional Applications Nos. 60/698,047, filed Jul. 11, 2005 and60/715,191, filed Sep. 8, 2005, the entire disclosures of each of whichare all hereby incorporated by reference herein. This application alsoclaims priority to as a continuation-in-part of U.S. patent applicationSer. No. 10/974,311 entitled “Hybrid Active Matrix Thin-Film TransistorDisplay,” filed on Oct. 27, 2004 now U.S. Pat. No. 7,327,080, which is acontinuation in part of U.S. patent application Ser. No. 10/782,580entitled “Hybrid Active Matrix Thin-Film Transistor Display”, filed onFeb. 19, 2004 now U.S. Pat. No. 7,274,136, which is a continuation inpart of U.S. patent application Ser. No. 10/763,030, entitled “HybridActive Matrix Thin-Film Transistor Display”, filed on Jan 22, 2004 nowabandoned, which is a continuation in part of U.S. patent applicationSer. No. 10/102,472, entitled “Pixel Structure For An Edge-EmitterField-Emission Display”, filed on Mar. 20, 2002 now U.S. Pat. No.7,129,626.

FIELD OF THE INVENTION

This application is generally related to the field of displays and moreparticularly to flat panel displays using nanotubes and Thin FilmTransistor (TFT) technology.

BACKGROUND OF THE INVENTION

Flat panel display (FPD) technology is one of the fastest growingdisplay technologies in the world, with a potential to surpass andreplace Cathode Ray Tubes (CRTs) in the foreseeable future. As a resultof this growth, a large variety of FPDs exist, which range from verysmall virtual reality eye tools to large hang-on-the-wall televisiondisplays.

It is desirable to provide a display device that may be operated in anoontide configuration, and that exhibits a uniform, enhanced andadjustable brightness with good electric field isolation between pixels.Such a device would be particularly useful as a FPD, such as a lowvoltage nanotube display (LVND), incorporating a nanotube-based electronemission system, a pixel control system, and phosphor based pixels, withor without memory.

SUMMARY OF THE INVENTION

A flat panel display including: a plurality of electrically addressablepixels; a plurality of thin-film transistor driver circuits each beingelectrically coupled to an associated at least one of the pixels,respectively; a passivating layer on the thin-film transistor drivercircuits and at least partially around the pixels; a conductive frame onthe passivating layer; and, a plurality of nanostructures on theconductive frame; wherein, exciting the conductive frame and addressingone of the pixels using the associated driver circuit causes thenanostructures to emit electrons that induce the one of the pixels toemit light.

In one exemplary embodiment, there is provided a thin, phosphor-basedactive TFT matrix flat panel vacuum display. Surrounding each pixel inthe matrix is a control conductive frame which contains carbonnanotubes. Each pixel has color or monochrome phosphors which areactivated by electrons created by a voltage potential between the frameand the pixel. The electrons strike the phosphor and cause the phosphorto emit light. Each pixel is addressed through a TFT matrix structure(e.g. a memory TFT matrix).

BRIEF DESCRIPTION OF THE DRAWINGS

It is to be understood that the accompanying drawings are solely forpurposes of illustrating the concepts of the invention and are not drawnto scale. The embodiments shown in the accompanying drawings, anddescribed in the accompanying detailed description, are to be used asillustrative embodiments and should not be construed as the only mannerof practicing the invention. Also, the same reference numerals, possiblysupplemented with reference characters where appropriate, have been usedto identify similar elements.

FIG. 1 illustrates an exemplary display device according to an aspect ofthe present invention.

FIG. 2 illustrates a control frame around each pixel and having a fixedvoltage according to an aspect of the present invention.

FIG. 2 a illustrate a control frame according to another aspect of thepresent invention.

FIG. 3 illustrates a circuit for driving the control frame of FIG. 2according to an aspect of the present invention.

FIG. 4 illustrates a top view of a control frame according to anotheraspect of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

It is to be understood that the figures and descriptions of the presentinvention have been simplified to illustrate elements that are relevantfor a clear understanding of the present invention, while eliminating,for the purpose of clarity, many other elements found in typical FPDsystems and methods of making and using the same. Those of ordinaryskill in the art may recognize that other elements and/or steps aredesirable and/or required in implementing the present invention.However, because such elements and steps are well known in the art, andbecause they do not facilitate a better understanding of the presentinvention, a discussion of such elements and steps is not providedherein.

Before embarking on a more detailed discussion, it is noted that passivematrix displays and active matrix displays are FPDs that are usedextensively in various display devices, such as laptop and notebookcomputers, for example. In a passive matrix display, there is a matrixof solid-state elements in which each element or pixel is selected byapplying a potential voltage to a corresponding row and column line thatforms the matrix. In an active matrix display, each pixel is furthercontrolled by at least one transistor and a capacitor that is alsoselected by applying a potential to a corresponding row and column line.Part of the invention lies in the recognition that a TFT-based displaydevice with a control frame disposed thereon exhibits enhancedperformance and effects useful for display devices. Electron emissionsources may be used with such a frame to form a cold cathodeconfiguration, such as one including edge emitters and/or nanotubeemitters.

According to an aspect of the present invention, a pixel matrix controlsystem having a control frame around each pixel associated with a thinfilm transistor (TFT) circuit of a display device is used to provide adisplay characterized as having a good uniformity, adjustablebrightness, and a good electric field isolation between pixels,regardless of the type of electron source used. For purposes ofcompleteness, a TFT is a type of field effect transistor made bydepositing thin films for the metallic contacts, semiconductor activelayer, and dielectric layer. TFT's are widely used in liquid crystaldisplay (LCD) FPDs.

The control frame surrounds the pixel and hence, the TFT, and isdisposed in an inactive area between the pixels (e.g. on an insulatingsubstrate over the respective columns and rows). The control frame canaccommodate carbon nanotube electron emission structures, and besuitable for operation at low voltages, such as a maximum voltage ofless than around 40 volts. In an exemplary configuration, the deviceoperates as a thin LVND.

According to an aspect of the present invention the electron emittingstructures take the form of nanostructures, such as carbon nanotubes.The diameter of a nanotube is typically on the order of a fewnanometers. According to an aspect of the present invention, single-wallcarbon nanotubes (SWNTs) and/or multiple wall carbon nanotubes (MWNTs)may be used.

According to an aspect of the present invention, the control frameincludes a plurality of conductors, typically arranged in a matrixhaving parallel horizontal conductors and parallel vertical conductors.Each pixel is bounded by the intersection of vertical and horizontalconductors, such that the conductors surround the corresponding pixelsto the right, left, top, and bottom in a matrix fashion. One or moreconductive pixel pads are electrically connected to the control frame.The control frame may be fabricated of a metal including, for example,chrome, molybdenum, aluminum, and/or combinations thereof.

According to an aspect of the present invention, the control frame canbe formed using standard lithography, deposition and etching techniques.

In one exemplary configuration, conductors parallel to columns and rowsare electrically connected together, and a voltage is applied thereto.In another exemplary configuration, conductors parallel to columns areelectrically connected together, and have a voltage applied thereto.Conductors parallel to the rows are also connected together, with avoltage applied thereto. In yet another exemplary configuration, avoltage is only applied to one of the parallel rows or columns ofconductors.

According to an aspect of the present invention, a vacuum FPDincorporating a TFT circuit may be provided. Associated with each pixelelement is a TFT circuit that is used to selectively address that pixelelement in the display. In one configuration the TFT circuit includesfirst and second active device electrically cascaded, and a capacitorcoupled to an output of the first device and an input of the seconddevice.

Referring now to the figures, FIG. 1 illustrates a schematiccross-sectional view of a TFT anode based FPD 100 according to an aspectof the present invention. In the exemplary embodiment, display 100 iscomposed of an assembly 110 that includes an anode and that employs TFTcircuitry to control the attraction of electrons, and a control framestructure 120 disposed on anode passivation layer 130. The control framesubstantially surrounds each of the pixel elements, and supportselectron emitting nantoubes. In the illustrated embodiment, the pixelmetal 140 operates as the anode, which attracts electrons emitted by theframe supported emitters.

Assembly 110 includes a plurality of conductive pixel pads 140fabricated in a matrix of substantially parallel rows and columns on asubstrate 150 using conventional fabrication methods. Column lines 160are associated with each of the corresponding pads 140. Substrate 150may be formed of a transparent material, such as glass, or a flexiblematerial (such as a plastic with no internal outgassing during sealingand vacuumization processing), but may be opaque. Substrate 170, whichserves to confine the FPD housing in an evacuated environment may alsobe made of a transparent (or at least translucent) material, such asglass or flexible material, but alternatively may be opaque. Conductivepixel pads 140 may be composed of a transparent conductive material,such as ITO (Indium Titanium Oxide) or a non-transparent conductor suchas Chrome (Cr), Moly Chrome (MoCr) or aluminum.

Deposited on each conductive pixel pad 140 is phosphor layer 180. Eachphosphor layer(s) 180 is selected from materials that emit light 190 ofa specific color, wavelength, or range of wavelengths. In a conventionalRGB display, phosphor layer 180 is selected from materials that producered light, green light or blue light when struck by electrons. In theillustrated embodiment, light (i.e. photons) is emitted in the directionof substrate 170 for viewing. If the pixel metal is of a transparent (ortranslucent) material (such as ITO) rather than opaque, light emissions190 would be transmitted in both the directions of substrates 150 and170 (rather than being reflected via the pixel metal to substrate 170only, for example).

Incorporated in the TFT circuit are conductive pixel column and rowaddressing lines associated with each of the corresponding conductivepixel pads 140. The pixel row and column addressing lines may besubstantially perpendicular to one another. Such a matrix organizationof conductive pixel pads and phosphor layers allows for X-Y addressingof each of the individual pixel elements in the display as will beunderstood by those possessing an ordinary skill in the pertinent arts.

Associated with each conductive pixel pad 140/phosphor layer 180 pixelis a TFT circuit 200 that operates to apply an operating voltage to theassociated conductive pixel pad 140/phosphor layer 180 pixel element.TFT circuit 200 operates to apply either a first voltage to bias anassociated pixel element to maintain it in an “off” state or a secondvoltage to bias the associated pixel element to maintain it in an “on”state, or any intermediate state. In this illustrated case, conductivepixel pad 140 is inhibited from attracting electrons when in an “off”state, and attracts electrons when in an “on” or any intermediate state.

TFT circuitry 200 biasing conductive pixel pad 140 provides for the dualfunctions of addressing pixel elements and maintaining the pixelelements in a condition to attract electrons for a desired time period,i.e., time-frame or sub-periods of time-frame.

Referring now also to FIG. 2, there is shown a plan view of a controlframe 220 suitable for use as control frame 120 of FIG. 1. Control frame220 includes a plurality of conductors arranged in a rectangular matrixhaving parallel vertical conductive lines 230 and parallel horizontalconductive lines 240, respectively. Each pixel 250 (e.g., pad 140 andphosphor 180 of FIG. 1) is bounded by vertical and horizontal conductorsor lines 230, 240, such that the conductors substantially surround eachpixel 250 to the right, left, top, and bottom. One or more conductivepads 260 electrically connect conductive frame 220 to a conventionalpower source. In the illustrated embodiment of FIG. 2, four conductivepads 260 are coupled to the conductive lines 230, 240 of frame 220. Inan exemplary embodiment, each pad 260 is around 100×200 micrometers(microns) in size.

FIG. 2 a shows another exemplary configuration of a control framestructure similar to that of FIG. 2 (wherein like reference numerals areused to indicate like parts), but wherein two of the pads 260 of FIG. 2are replaced by a single conductive bar or bus 260′. The conductive bar260′ is coupled to each of the parallel horizontal conductive lines 240_(a), 240 _(b), 240 _(c), . . . , 240 _(n) at corresponding positions260 _(a), 260 _(b), 260 _(c), . . . , 260 _(n) along the bar. In theillustrated configuration, the row lines are substantially identical toone another and interconnect to the bar at uniform spacings along thelength of the bar. This configuration provides for an equipotentialframe configuration with minimal voltage drops as a function of frameposition.

In the illustrated embodiment control frame 220 (or 220′) is formed as ametal layer above the final passivation layer (e.g., 130, FIG. 1). Pads260 and metal lines that provide the control frame structure 220 remainfree from passivation in the illustrated embodiment. In an exemplaryconfiguration, the control frame metal layer has a thickness of lessthan about 1 micron (μm), and a width on the order of about 16-19microns, although other thicknesses and widths may be used depending onparticular design criteria.

Referring to FIG. 4, the conductive part of frame 220 may be widened(e.g. by about 4 um) and an insulating layer 450 (e.g. SiN) provided ateach edge for preventing electrical short circuits from the frame to thepixels, and to encapsulate the frame edge which is associated with highfield intensity. Accordingly, the exposed part 430 of the frame may havea width w of about 12-15 um.

According to an aspect of the present invention, nanostructures areprovided upon control frame 220. The nanostructures may take the form ofcarbon nanotubes, for example. The nanostructures may take the form ofSWNTs or MWNTs. The nanostructures may be applied to the control frameusing any conventional methodology, such as spraying, growth,electrophoresis, or printing, for example.

By way of further non-limiting example only, where electrophoresis isused to apply nanotubes to frame 220, about 5 mg of commerciallyavailable carbon nanotubes may be suspended in a mixture of about 15 mLof Toluene and about 0.1 mL of a surfactant, such as polyisobutenesuccinamide (OLOA 1200). The suspension may be shaken in a containerwith beads for around 3-4 hours. Thereafter, the frame may be immersedin the shaken suspension, while applying a DC voltage to the frame thatis negative relative to a suspension electrode (where the nanotubes havea positive charge).

While the vertical line conductors 230 and horizontal line conductors240 frame each pixel 250 above the plane of the pixels 250 in theillustrated embodiment (see, e.g., FIG. 1), other configurations arecontemplated, such as where the conductors are disposed in the sameplane as the pixels. Further yet, conductors 230, 240 may be connectedin a number of configurations. For example, in one configuration, allhorizontal and vertical conductors are joined together as shown in FIG.2 and a voltage is applied to the entire control frame configuration. Inanother configuration, all horizontal conductors 240 are joined andseparately all vertical conductors 230 are joined. In this connectionconfiguration the horizontal conductors 240 and vertical conductors 230are not electrically interconnected. Thus, a voltage may be applied tothe horizontal conductor array, and a separate voltage may be applied tothe vertical conductor array. Other configurations are alsocontemplated, including for example, a configuration of all horizontalconductors only, or a configuration of all vertical conductors only. Forexample, the control frame may include only metal lines parallel to thecolumns or only metal lines parallel to the rows.

Regardless of the particulars, a voltage (V_(TN)) equal to(V_(PIXEL(Low))−(V_(THN))) may be applied to the frame via pads 260,where (V_(THN)) represents the nanostructure emitting threshold andV_(PIXEL(low)) represents the minimum pixel voltage. This voltage mayserve to keep the frame supported nanostructures to just below theemitting threshold when the pixel voltage is in it's “OFF” state. Thispermits the pixel voltage to transition from the “OFF” state to the “ON”state and all voltages in between to cause changes in brightness (GrayScale).

The anode (pixel) voltage (V_(PIXEL)) of each pixel determines thebrightness or color intensity of that pixel. By positively biasing thepixel voltage (V_(PIXEL)) relative to the voltage of the frame, thevoltage on that pixel is increased beyond the emitting threshold of thenanotubes (V_(THN)), such that the frame supported nanostructures in theregion around a biased pixel are caused to emit electrons, which arethen attracted to the positively biased pixel. In other words, when thevoltage applied to the pixel (V_(PIXEL)) relative to the voltage appliedto the control frame nanostructures (V_(TN)), exceeds the emissionthreshold voltage (V_(THN)), electrons are emitted from thenanostructures. The electrons emitted from the nanostructures move tothe anode (phosphor), thereby causing the phosphor to emit light,V_(PIXEL)≧V_(TN)+V_(THN). The wavelength of the emitted light dependsupon the phosphor. The electron flow to the anode (i.e. pixel current)is a function of the pixel voltage, thereby producing an illuminationwhich is proportional to the amplitude of column data, when the voltagesignal applied to the pixel is proportional to the amplitude of thedata.

According to an aspect of the present invention, control of one or moreof the TFTs associated with the display device of the present inventionmay be accomplished using the circuit 300 of FIG. 3. Circuit 300includes first and second transistors 310, 330 and capacitor 320electrically interconnect with a pixel, e.g., pad 140, FIG. 1.

In general, the voltage used to select the row (V_(ROW)) is equal to thefully “on” voltage of the column (Vc). The row voltage in this casecauses the pass transistor 310 to conduct. The resistance of passtransistor 310, capacitor 320 and the write time of each selected pixelrow determines the voltage at the gate of transistor 330, as compared toVc. Using a voltage V_(ROW) higher than the fully “on” voltage (Vc)increases the conduction of transistor 310, reducing its resistance andresulting in an increase in pixel voltage (V_(Pixel)) and enhancedbrightness. Thus, the selection voltage for the row is higher than thehighest column voltage, thereby causing transistor 310 to turn onheavily, thereby reducing the associated resistance and providing agreater voltage on the gate of transistor 330. V_(ANODE) is the powersupply voltage, and may be on the order of about 40V. In such aconfiguration, V_(PIXEL LOW) may be on the order of around 6-12 V.

While there has been shown, described, and pointed out fundamental novelfeatures of the present invention as applied to preferred embodimentsthereof, it will be understood that various omissions and substitutionsand changes in the apparatus described, in the form and details of thedevices disclosed, and in their operation, may be made by those skilledin the art without departing from the spirit of the present invention.For example, the control frame described previously may be used with anydisplay which uses electrons or charged particles to form an image, suchas an LVND, Electrophoretic, or VFD display. As discussed above, it isalso understood that the present invention may be applied to flexibledisplays in order to form an image thereon.

It is expressly intended that all combinations of those elements thatperform substantially the same function in substantially the same way toachieve the same results are within the scope of the invention.Substitutions of elements from one described embodiment to another arealso fully intended and contemplated.

1. A flat panel display comprising; a plurality of electricallyaddressable pixels, each of said pixels being electrically addressableby including a conductive pad that is coated with a phosphor; aplurality of thin-film transistor (TFT) driver circuits each beingelectrically coupled to an associated one of said plurality of saidpixels; a passivating layer on said thin-film transistor driver circuitsand at least partially around said pixels; a conductive frame on saidpassivating layer, wherein conductor elements of said frame arepositioned between said pixels to substantially surround each of saidpixels; a plurality of nanostructures on said conductive frame; asubstrate supporting said pixels including said phosphor coatedconductive pad, said TFT driver circuits, said passivating layer andsaid conductive frame, means for applying a known voltage to saidconductive frame, said known voltage being less than an electronemission threshold voltage of said nanostructures; and means foraddressing one of said pixels using said associated driver circuit,wherein said addressing causes application of a voltage to said pixel tocreate a potential difference greater than said emission thresholdvoltage.
 2. The display of claim 1, wherein said substrate istransparent.
 3. The display of claim 1, further comprising: a secondsubstrate oppositely disposed from said substrate supporting saidpixels, said driver circuits, said passivating layer and said frame,wherein said second substrate is transparent.
 4. The display of claim 1,wherein said conductive frame comprises a plurality of parallel rows ofconductors.
 5. The display of claim 1, wherein said conductive framecomprises a plurality of parallel columns of conductors.
 6. The displayof claim 1, wherein said conductive frame comprises a matrix of row andcolumn conductors defining a plurality of cells each associated with oneof said pixels.
 7. The display of claim 1, further comprising at leastone contact pad electrically coupled to said conductive frame.
 8. Thedisplay of claim 1, wherein said nanostructures comprise carbonnanotubes.
 9. The display of claim 1, wherein: said driver circuitcomprises at least one transistor coupled to said conductive pad. 10.The display of claim 1, wherein: said driver circuit comprises a firsttransistor coupled to said conductive pad and a second transistor andcapacitor coupled to a gate of said first transistor.
 11. A displaycomprising: a substrate; a plurality of electrically addressable pixelssupported on said substrate, said electrically addressable pixels beingcoated with a phosphor, a passivating layer covering said substrate; aconductive frame supported on said passivating layer, wherein elementsof said conductive frame are positioned between said pixels tosubstantially surround each of said pixels; and a plurality ofnanostructures on said conductive frame; means for applying apredetermined voltage to said conductive frame, said predeterminedvoltage being less than an electronic emission threshold voltage of saidnanostructures; means for addressing one of said pixels to apply avoltage to selected ones of said addressable pixels to create a voltagedifference greater than said electronic emission threshold voltage. 12.The display of claim 11, wherein said substrate is transparent.
 13. Thedisplay of claim 11, further comprising: a second substrate oppositelydisposed from said substrate, wherein said second substrate istransparent.
 14. The display of claim 11, wherein said conductive framecomprises a matrix of row and column conductors defining a plurality ofcells each associated with one of said pixels.
 15. The display of claim11, further comprising at least one contact pad electrically coupled tosaid conductive frame.
 16. The display of claim 11, wherein saidnanostructures comprise carbon nanotubes.
 17. The display of claim 11,wherein each said pixel comprises a conductive pad and at least onetransistor coupled to said conductive pad.
 18. The display of claim 11,wherein each said pixel comprises a conductive pad, a first transistorcoupled to said conductive pad, and a second transistor and capacitorcoupled to a gate of said first transistor.